THE ODYSSEY OF SESAME LIBRARY   Block-busting Reduced Cell Stem Library HD - LC - HS - ULL optimizations     SESAME, A REDUCED LIBRARY FOR INCREASED PERFORMANCES SESAME has benefited from the initial developments made by the CSEM (Swiss Electronic and Microtechnic Center) since 98 for the ultra-low-power demanded by the watch industry. Proposed since 2004, SESAME takes advantage of Dolphin’s 20 years of expertise in the design of embedded memories while relying on a unique and stringent qualification process. It led to enhancing the ultra-low power features of SESAME with major innovations in the directions of low power, low-leakage, high density, high speed, low voltage and Time-to-Fab. There is more to come for reducing congestion…   SESAME, A PROVEN RECORD OF CONTINUOUS INNOVATION   Continuous innovations for Less power less leakage smaller area faster place and route…   Resulting in The 5 Advantages of the SESAME library   KEY MILESTONES 2004 Launch of the SESAME product line resulting from the CSEM partnership based on the first and second advantage First industrial partnerships for low voltage and low power for LP1 Library Patent on a specific D-flip-flop which is less sensitive to clock edges and guarantees the functionality at very low voltage. 2005 Second generation of LP library named eLCvHS, re-optimized for better density with same low power and low voltage 2006 Launch of the first ultra-high density stem uHD Design wins for low-power in 0.18 and 0.25 µm Second release of uHD library, enhanced for higher speed with same low area benefits First design wins for ultra-high density 2007 Licensing agreements with Tier1 companies and leading foundries Launch of BIV library for Battery Interface Voltage range Launch of low-power libraries for 130 and 90 nm 2008 Launch of retention islet project (upon prospects’ requests) Design wins in 90 and 130 nm High-density BTF library for common platform at 65 nm Back-Tracking Freedom, a capability which eliminates the disruptive iterations for fixing timing-critical paths Referencement by TSMC for ultra high density and ultra low power at 180 nm 2009 Launch of HD-BTF in 65 nm and 180 nm Patent-pending enhancement by “STI-Stress Freedom” for high density and high speed in the most advanced process nodes 2010 Launch of the improved release of HD-BTF in 65 nm, 130 nm and 180 nm with the "spinner cell” Stem composition with the HS-BTF stem in 65 nm, 130 nm and 180 nm Launch of the Dual Voltage release of the HD-BTF in 180 nm

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