Flash announcement
The SpRAM PLUTON is a breeze cooling up to 100 times leakage beyond stand-by modes at 180 nm
Grenoble, France - May 02, 2011
The celebrated PLUTON eLC architecture for single port RAM used in millions of chips for low power and high density, at nominal and low voltage, is now offered with innovations dividing leakage up to 100 times at 180 nm!
5 options to grant the optimal trade-offs between power and density while facilitating integration:
In mature process nodes, decreasing the leakage current of large arrays of memory is a crucial solution for designing power sensitive SoCs.
To address the leakage challenge, Dolphin Integration has enriched the PLUTON architecture of Single Port RAM so as to offer a generator endowed with 5 differentiated options enabling SoC leakage control through local retention and/or extinction of the SpRAM instance. Depending on the option selected, leakage is divided by a factor of up to 100.
Additional benefits
Straightforward design-in
- Mux factor can be chosen
- Single power supply: VDD
- Single command signal controlled by the SoC Integrator
- Directly implementable in any standard EDA flow
Ultra low Dynamic Power
- Up to 60% less consuming than foundry sponsored solutions by design
- A Low Voltage and a Dual Voltage variants are also available
Have a quick look at the Presentation Sheet:
To gain access to evaluation material, contact directly the product manager at ragtime@dolphin.fr
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