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Catalogue > HD-LP Panoply 90 nm > SpRAM RHEA-HD/RR Generator TSMC 90 nm LP

SpRAM RHEA-HD/RR Generator TSMC 90 nm LP

PRELIMINARY

HIGH DENSITY

LOW POWER – LOW/DUAL VOLTAGE

LOW LEAKAGE

To maintain or increase their strength on the market, manufacturers of high density consumer and portable devices must regularly offer more features to their end customers - while maintaining competitive pricing and performances. For this reason, finding the best compromise between low power and cost reduction is a significant challenge for SoC designers.
Dolphin Integration provides customers with new capabilities for designing differentiated circuits at 85 nm LP with the introduction of a Single Port RAM which stars the proprietary architecture RHEA and is available in two different product options:
The High Density option (RHEA-HD), designed with the power aware RHEA architecture and embedding the pushed-rule bit-cell from foundries, is the solution for low dynamic power consumption together with high density.
The Retention Ready (RHEA-RR) option meets the most demanding power budgets thanks to its smart low power design and its retention mode.

Thanks to the combined benefits of the TSMC 90 nm bit-cell and of the innovative RHEA architecture, common Users have the opportunity to decrease leakage by more than 40% and to increase the density by up to 10% compared with traditional memory compilers. For even further power reduction, Low Voltage and Dual Voltage (DV) variants of this architecture are also available.

 

Positioning & Differentiators

positioning

 

deliverable

Key Benefits of RHEA

  • Reduced die cost
    • Up to 10% denser than traditional memory compiler
    • Pushed rule bit cell from foundry
    • Routing allowed upwards from Metal 4, Support Metal 5 top Metal option
  • Ultra low dynamic power
    • Multi-plane architecture
    • Byte write/read capability
    • Flexible power routing: power ring or ring-less
    • Up to 50% less consuming at nominal voltage
    • A Low Voltage and a Dual Voltage variants of this product are also available
  • Ultra low leakage design
    • Up to 25% less leaky in stand by mode compared with a standard offering at 90 nm LP
    • Optional Data retention mode (RHEA-RR option): only the memory plane and the circuitry for retention would remain powered. Note that this data-retention mode requires 2 VDD power supply lines and one GND
  • Easy integration
    • Mux factor can be chosen
    • Architecture specifically designed to limit dynamic IR Drop
    • Models of peak current delivered for free
  • The Dolphin quality
    • Guaranteed design yield for the memories in your circuits
  • Decrease of Time-To-Market
    • Layout compatibility with shrink processes
    • Layout compatibility between various foundries

 

 

 

 

 

Available modes and Add-ons

Data Retention mode - included
For ultimate leakage savings: only the memory plane and the circuitry for retention would remain powered. Note that this data-retention mode requires 2 VDD power supply lines and one GND.

Byte mode - included
For more flexibility towards ultimate power savings, the capability of Byte-mode can be implemented in the RAM for Read/Write operations.

BIST - optional
The most efficient testing solution for industrial fabrication test of instances


Flexibility

Generator flexibility
Min
Max
Granularity
Memory Bit Capacity
8 k
512 k
NA
Number of Words
1 k
16 k
2
Number of Bits per Word
8
128
2

 

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