Catalogue > HD-LP Panoply 90 nm > sROMet uHDeLL Phoenix 90 nm sROMet uHDeLL Phoenix 90 nm   This metal-programmable ROM through a single layer stars proprietary architecture PHOENIX optimized for ultra-low-leakage embedding smart and optimal pre-charge circuitries enabling around 300 MHz in worst case in TSMC 90 nm LP! It embeds a key patent for reaching high-density with only one programming layer, especially dedicated to deep submicron technologies!   Positioning & Differentiators   Key Features Ultra-low-leakage even in a generic process: No leakage in memory plane Minimal leakage in memory periphery while achieving between 230 and 300 MHz in worst case in TSMC 90 nm LP ! Key patent for high density with only one programming layer Optimized for high DfY i.e. no compromise at the cost of design margins such as read margin           Add-ons & Peripherals (optional ) Scrambling A scrambling feature customized for each customer according to specific needs: it may include various protection structures involving addressing systems for word-lines, bit-lines, memory bit-cells… Error Correcting Code Our ECC generator is based on the HAMMING algorithm that enables to detect 2 errors and correct one error per word. Flexibility Generator flexibility Min Max Granularity Memory Bit Capacity 16 k 1 M NA Number of Words 1 k 64 k 1 Number of Bits per Word 8 128 2   Ask for more information, please click here

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