Catalogue > HD-LP Panoply 180 nm > dpRAM MARS XAM Instances TSMC 180 nm G

dpRAM MARS XAM Instances TSMC 180 nm G

Low Power

Dual Voltage

To maintain or increase their strength on the market, manufacturers of high density consumer and nomad devices must regularly offer more features to their end customers - while maintaining competitive pricing. Because of this trend, finding the best compromise between low power and cost reduction is a significant challenge for SoC designers.

To address this challenge, SoC designers targeting the 180 nm G process now can take advantage of Dolphin Integration’s High Density - Low Power Panoply. The Panoply includes Single Port and Dual Port RAMs, metal programmable ROMs, and standard cells.

The dual port RAM meets the most demanding power budgets thanks to its smart low power design and its power reduction features.

Positioning & Differentiators

Key Benefits

Dual Port functionality

2 Read / 2 Write

Power reduction features

Patented bit-cell featuring half the power consumption compared with conventional bit-cells
Functionality guaranteed from 2.0 V down to 1.0 V

Decrease of fabrication costs

Metal 5 and above free for routing

Part of the “High Density - Low Power Panoply”

Single port RAM Pluton
Via-programmable ROM Cassiopeia`
uHD-BTF and eLC DV standard cell libraries

Optimal Design for Yield

Optional BIST for industrial fabrication test of instances
Association with LDO for regulated power supply voltages

Flexibility

Generator flexibility	Min	Max	Granularity
Memory Bit Capacity	1 k	64 k	NA
Number of Words	128	4096	1
Number of Bits per Word	8	32	1

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Standard cells Memories