Catalogue > LP-LV Panoply 180 nm > dROMet CASSIOPEIA LV Generator SMIC 180 nm EEPROM dROMet CASSIOPEIA LV Generator SMIC 180 nm EEPROM   Low fabrication costs Low Power – Low Voltage Patented Embedding one key patent for the ROM bit-cell, the metal programmable dROMet is the solution for high density. Its benefits also include low power thanks to the innovative CASSIOPEIA architecture: Smart and optimal pre-charge circuitries enable no leakage in the memory plane and minimize dynamic power consumption through the optimization of pre-charge level during read operations Self-sequenced circuitry for ensuring robustness against process deviations     Key Benefits Ultra low dynamic power Decrease of packaging cost Smaller SoC area Functionality down to 1.1 V: 2 times less consuming compared to standard operation at 1.8 V Decrease of fabrication costs Metal 1 and Via metal 1-2 programmable ROM Compatible with 1P4M SoC 20% denser than conventional metal or via ROM Low leakage No leakage in memory plane Minimal leakage in memory periphery 60% less leaky than conventional metal or via ROM Optimal DfY Vias half as numerous in comparison with a traditional metal or via ROM CASSIOPEIA Architecture using bigger transistors for optimized read margin and low sensitivity to mismatch   Optional Add-ons and peripherals Scrambling A scrambling feature customized for each user according to specific needs: it may include various protection structures involving addressing systems for word-lines, bit-lines, memory bit-cells… Error Correcting Code Our ECC generator is based on the HAMMING algorithm which enables to detect 2 errors and correct one error per word. Flexibility Generator flexibility Min Max Granularity Memory Bit Capacity 1 k 1024 k NA Number of Words 256 128 k 1 Number of Bits per Word 4 128 1   Ask for more information, please click here

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