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Catalogue > LP-LV Panoply 180 nm > SpRAM Pluton eLC-RR LV Generator TSMC 180 nm eLL

SpRAM Pluton eLC-RR LV Generator TSMC 180 nm eLL


Low Power - Low Voltage

Retention mode

Low fabrication costs

 

Dolphin Integration provides customers with new capabilities for designing extremely low-leakage circuits in the new eLL 180 nm process variant. Dolphin Integration’s offering is based on a comprehensive set of silicon-proven libraries, which enable the best combination of logic density and low power consumption, including the capability to embed power-islets and to operate at very low voltage.

Thanks to the combined technology benefits of the TSMC process and of innovative libraries, common Users have the opportunity to divide leakage by more than 100 at 180 nm eLL! This eLL platform is Foundry Sponsored.

 

Positioning & Differentiators

positioning

Availables modes and add-ons

Byte write mode - optional
For more flexibility towards ultimate power savings, the capability of Byte-mode can be implemented in the RAM for write operations.

Data Retention mode - included
For ultimate leakage savings: only the memory plane and the circuitry for retention would remain powered. Note that this data-retention mode requires 2 VDD power supply lines and one GND.

Key Benefits

  • Reduced die cost
    • Pushed rule bit cell from foundry
  • Ultra low power
    • Low voltage operation down to 1.2 V
    • Multi-plane architecture
    • Optional Byte write mode
    • A Dual Voltage variant of this product is also available
  • Ultra low leakage
    • Stand by mode
    • Data retention mode
    • 260 times less leaky in retention mode compared with the PLUTON eLC-RR option in G process!
    • This translates into 500 times less leakage compared to simple stand-by mode
  • Easy integration
    • Mux factor can be chosen
    • Deliverables compatible with Top Metal 4 or Top Metal 5 or +
    • Wide flexibility for words and bits per word
  • The Dolphin quality
    • Silicon Proven architecture
    • Design methodology ensuring functionality at low voltage

deliverable

Flexibility

Generator flexibility
Min
Max
Granularity
Memory Bit Capacity
512
512 k
NA
Number of Words
128
64 k
1
Number of Bits per Word
4
64
1

 

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