Communication
Contacts
Offering
Investors
Careers
Libraries of Standard cells and Memories
Logic virtual components
Analog virtual components
Test structures
Hardware/Software Codesign
Virtual test & diagnostic
Hardware/Software Codesign
Layout verification
My MEDAL
Quadrant of skills
SoC Integration
Custom Fabless Supplier
 
 

Search dolphin:

silicium estimator
foundry sponsored
Catalogue > HD-LP Panoply 180 nm > SpRAM Pluton eLC-HD Generator TSMC 180 nm eLL

SpRAM Pluton eLC-HD Generator TSMC 180 nm eLL


Low fabrication costs

Low Power

 

Dolphin Integration provides customers with new capabilities for designing extremely low-leakage circuits in the new eLL 180 nm process variant. Dolphin Integration’s offering is based on a comprehensive set of silicon-proven libraries, which enable the best combination of logic density and low power consumption, including the capability to embed power-islets and to operate at very low voltage.

Thanks to the combined technology benefits of the TSMC process and of innovative libraries, common Users have the opportunity to divide leakage by more than 100 at 180 nm eLL! This eLL platform is Foundry Sponsored.

 

Positioning & Differentiators

positioning

Availables modes and add-ons

Byte write mode - optional
For more flexibility towards ultimate power savings, the capability of Byte-mode can be implemented in the RAM for write operations.

Key Benefits

  • Reduced die cost
    • Pushed rule bit cell from foundry
  • Ultra low power
    • Multi-plane architecture
    • Optional Byte write mode
    • A Low Voltage and a Dual Voltage variants of this product are also available
  • Ultra low leakage
    • Stand by mode
    • 25 times less leaky in stand by mode compared with the PLUTON eLC-HD option in G process!
  • Easy integration
    • Mux factor can be chosen
    • Deliverables compatible with Top Metal 4 or Top Metal 5 or +
    • Wide flexibility for words and bits per word
  • The Dolphin quality
    • Silicon Proven architecture
    • Guaranteed design yield for the memories in your circuits

deliverable

Flexibility

Generator flexibility
Min
Max
Granularity
Memory Bit Capacity
512
512 k
NA
Number of Words
128
64 k
1
Number of Bits per Word
4
64
1

 

Ask for more information, please click here