Catalogue > Ultra Low Leakage Panoply 180 nm > SpRAM Pluton eLC-RS Generator TSMC 180 nm G SpRAM Pluton eLC-RS Generator TSMC 180 nm G Preliminary Low Power Low Leakage Easy Integration   Thanks to its embedded retention switches, the eLC-RS PLUTON option makes it easy to reduce leakage in retention mode.   Synoptic     Key Benefits Reduced die cost Less than 6% area overhead in comparison with the Pluton eLC-HD Automatic sizing of the embedded power switches for each memory instance Ultra low dynamic power Multi-plane architecture Up to 60% less consuming than foundry sponsored solutions A Low Voltage and a Dual Voltage variants of this product are also available Ultra low leakage SoC leakage control through local retention of the sRAM Leakage is divided by 4 at 180 nm G in comparison with the Pluton eLC-HD Stand by mode Easy integration Mux factor can be chosen Only one power supply: VDD and only one command signal to be managed by the SoC Integrator Directly implementable in standard EDA flow The Dolphin quality Electrical validation and characterization are done including the power switches Transition between modes are managed internally by the Islet Controller           Flexibility Generator flexibility Min Max Granularity Memory Bit Capacity 512 512 k NA Number of Words 128 64 k 1 Number of Bits per Word 4 64 1   Ask for more information, please click here

Standard cells Memories

| Home Page | General Sales Terms and Conditions | Privacy Policy | Site Map |