Single-Port RAM ULL NEPTUNE 180 nm G
Ultra low leakage |
Low Power |
Patented |
Embedding two key patents, the Single-Port RAM-uLL Architecture is THE optimal mix between ultra low Leakage, low Dynamic Power consumption and Voltage Scaling
It stars the proprietary architecture NEPTUNE-XAM:
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The patented XAM bit-cell for minimizing dynamic power consumption
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The "Thick and Thin" patent for leakage
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The Self-sequenced circuitry for ensuring robustness against process deviations.
Positioning & Differentiators
Key Benefits

Available modes
Data Retention mode - included
For ultimate leakage savings: only the memory plane and the circuitry for retention would remain powered. Note that this data-retention mode requires 2 VDD power supply lines and one GND.
Byte mode - included
For more flexibility towards ultimate power savings, the capability of Byte-mode can be implemented to enable writing per single, double or quadruple Bytes RAM for more flexibility towards ultimate power savings.
BIST - optional
The most efficient testing solution for industrial fabrication test of instances
Error Correcting Code
Enables detecting two errors and correct one error per word.
DC-DC Converter
With mode control can embed the generation of the appropriate VDD33 from 1.8 V (+/- 10%).
Flexibility
| Generator flexibility |
Min |
Max |
Granularity |
| Memory Bit Capacity |
8 k |
256 k |
NA |
| Number of Words |
512 |
8 k |
1 |
| Number of Bits per Word |
8 |
32 |
1 |
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